MMRF2005GN

Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V; • Characterized with series equivalent large-signal impedance parameters and common source S-parameters\n• On-chip matching (50 ohm input, DC blocked, >5 ohm output)\n• Integrated quiescent current temperature compensation with enable/disable function\n• Integrated ESD protection\n• RoHS compliant\n;

The MMRF2005N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage structure is rated for 24 to 32 V operation and is ideal for applications including radio communications, data links and UHF radar.

恩XP

MMRF2005GN

RF LDMOS Wideband Integrated Power Amplifiers

ETC

MMRF2005N

RFLDMOSWidebandIntegratedPowerAmplifiers

ETC

MP2005

800mAHighPSRR,ULDOLinearRegulator

MP2005

500mALow-CurrentLDOLinearRegulatorEVBoard

MP2005

800mALow-CurrentLDOLinearRegulatorEVBoard

MP2005DD

800mAHighPSRR,ULDOLinearRegulator

MPC2005

256KBand512KBBurstRAMSecondaryCacheModulesforPowerPCPReP/CHRPPlatforms

TheMPC2004andMPC2005aredesignedtoprovideburstable,highperformance256KB/512KBL2cacheforthePowerPC60xmicroprocessorfamilyinconformancewiththePowerPCReferencePlatform(PReP)andthePowerPCCommonHardwareReferencePlatform(CHRP)specifications.Themodulesareconfigured

MSN2005Z

200V(D-S)N-ChannelEnhancementModePowerMOSFET

MTD2005

SteppingMotorDriverICs

SteppingMotorDriverICs FEATURES ●Constant-currentchoppingfunction(Frequencyfixed,separate-oscillation) ●2-phaseinput(ENAinputisusefulforhalfstepdrive) ●Selectableslow/fastcurrentdecayforimprovedmicrostepping ●Anoisecancelfunctionisprovided(Noexternal