RF LDMOS Wideband Integrated Power Amplifier

文件：764.85 Kbytes 页数：18 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier

文件：764.85 Kbytes 页数：18 Pages

恩XP

1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier

The MMRF2006NT1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage structure is rated for 26 to 32 V operation and can be used in many RF amplifier modulation formats. • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• RoHS Compliant\n• In Tape and R;

恩XP

恩智浦

MEDIUM CURRENT SILICON RECTIFIERS

文件：288.11 Kbytes 页数：4 Pages

DIGITRON

MEDIUM-CURRENT SILICON RECTIFIERS

文件：85.91 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

900 MHz 2 STAGE PA SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2006 is an Integrated PA designed for linear operation in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2006 include CT-1 an

文件：165.09 Kbytes 页数：8 Pages

Motorola

摩托罗拉