RF Power LDMOS Transistors

文件：804.78 Kbytes 页数：19 Pages

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RF Power LDMOS Transistors

文件：804.78 Kbytes 页数：19 Pages

恩XP

RF Power LDMOS Transistors

文件：804.78 Kbytes 页数：19 Pages

恩XP

470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

The MMRF1018NR1 and MMRF1018NBR1 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz. • Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz, 90 W CW Output Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Input Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Excellent T;

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Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V

The MMRF1018NR1 and MMRF1018NBR1 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz. • Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz, 90 W CW Output Power\n• Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Input Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Excellent T;

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