MMRF1314GS

RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V; • Internally input and output matched for broadband operation and ease of use\n• Device can be used in a single-ended, push-pull or quadrature configuration\n• Qualified up to a maximum of 52 VDD operation\n• High ruggedness, handles > 20:1 VSWR\n• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing\n• Characterized with series equivalent large-signal impedance parameters\n• RoHS Compliant\n• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.\nTypical Applications• Military and commercial L-Band radar systems\n;

These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications.

恩XP

MMRF1314GS

RF Power LDMOS Transistors

ETC

1314

Window“ViewPort”Plugs

1314C

TOPVIEWTYPETRI-COLOR

1314SB

SpeakerCable,2C#14StrTC,LSZHJacket,CMG-LS,ABSCertified,Flexible

ProductDescription SpeakerCable,2Conductor14AWG(41x30)TinnedCopper,PPinsulation,LSZHjacket,Ripcord,CMG-LS-rated,ShipboardABSTypeApproved,Flexible

PA1314AHL

PowerBeads