RF Power LDMOS Transistors

文件：851.9 Kbytes 页数：17 Pages

恩XP

RF Power LDMOS Transistors

文件：851.9 Kbytes 页数：17 Pages

恩XP

1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars. • Internally input and output matched for broadband operation and ease of use\n• Device can be used in a single-ended, push-pull, or quadrature configuration\n• High ruggedness,handles > 10:1 VSWR\n• Integrated ESD protection with greater negative voltage range for improved Class C operation and gat;

恩XP

恩智浦

RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars. • Internally input and output matched for broadband operation and ease of use\n• Device can be used in a single-ended, push-pull, or quadrature configuration\n• High ruggedness,handles > 10:1 VSWR\n• Integrated ESD protection with greater negative voltage range for improved Class C operation and gat;

恩XP

恩智浦