MMRF1317H数据手册恩XP中文资料规格书

描述 Description

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars.

特性 Features

• Internally input and output matched for broadband operation and ease of use
• Device can be used in a single-ended, push-pull, or quadrature configuration
• High ruggedness,handles > 10:1 VSWR
• Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
• Characterized with series equivalent large-signal impedance parameters
• RoHS Compliant
Applications
• Ground-based secondary surveillance radars
• IFF transponders