MMRF1018N数据手册恩XP中文资料规格书

描述 Description

The MMRF1018NR1 and MMRF1018NBR1 90 W RF power LDMOS transistors are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.

特性 Features

• Capable of Handling 10:1 VSWR, All Phase Angles @ 50 Vdc, 860 MHz, 90 W CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 50 Units, 44 mm Tape Width, 13-inch Reel.
NOTE: PARTS ARE SINGLE–ENDED