RF Power LDMOS Transistors

文件：481.27 Kbytes 页数：14 Pages

恩XP

RF Power LDMOS Transistors

文件：481.27 Kbytes 页数：14 Pages

恩XP

RF Power LDMOS Transistors

文件：481.27 Kbytes 页数：14 Pages

恩XP

1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz. • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

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恩智浦

Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V

These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz. • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

恩XP

恩智浦