Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V

These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz. • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

恩XP

恩智浦

RF Power LDMOS Transistors

文件：481.27 Kbytes 页数：14 Pages

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TMOS POWER FET 75 AMPERES

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is des

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Motorola

摩托罗拉

N?묬hannel Power MOSFET

文件：216.91 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

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Motorola

摩托罗拉