TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

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MOTOROLA

摩托罗拉

N?묬hannel Power MOSFET

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ONSEMI

安森美半导体

TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

恩XP

N−Channel Power MOSFET

ONSEMI

安森美半导体