isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.135Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.04 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT-MODE SILICON GATE

文件：163.17 Kbytes 页数：5 Pages

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N-CHANNEL ENHANCEMENT-MODE SILICON GATE

恩XP

Sales Outline Drawing

文件：320.86 Kbytes 页数：1 Pages

MSPI

马洛里

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.52 Kbytes 页数：2 Pages

ISC

无锡固电

15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET

15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, an

文件：40.82 Kbytes 页数：5 Pages

INTERSIL