POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times S

文件：166.98 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement-Mode Power Field-Effect Transistors

文件：87.94 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS

文件：234.2 Kbytes 页数：4 Pages

GESS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：283.25 Kbytes 页数：2 Pages

ISC

无锡固电