TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

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Motorola

摩托罗拉

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

N - CHANNEL 60V - 0.1Ω- 12A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATOR

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STMICROELECTRONICS

意法半导体

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

恩XP

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

ST

意法半导体

N-CHANNEL 60V - 0.1W - 12A TO-220 STripFET™ POWER MOSFET

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

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SYC

N-CHANNEL 60V-0.1Q-12A TO-220 STripFET??MOSFET

N - CHANNEL 60V - 0.1Ω- 12A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATOR

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

N - CHANNEL 60V - 0.1Ω- 12A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATOR

文件：81.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.66 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.8 Kbytes 页数：2 Pages

ISC

无锡固电