| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
P?묬hannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SWITCHINGP-CHANNELPOWERMOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
MTP20P06
- 制造商：
unknown
- 功能描述：
20P06
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6893 |
询价 | |||
N/A |
8100 |
询价 | |||||
MOT |
05+ |
TO-220 |
3000 |
原装进口 |
询价 | ||
MOT |
23+ |
TO-220 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
MOT |
22+23+ |
TO-220 |
16166 |
绝对原装正品全新进口深圳现货 |
询价 | ||
23+ |
N/A |
30050 |
正品授权货源可靠 |
询价 | |||
ON |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ON |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
ON |
2021+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 |
相关规格书
更多- MTP226M015P1A
- MTP227M015
- MTP2301S3
- MTP2305N3
- MTP23N05L
- MTP23P06VG
- MTP24K11B
- MTP2603G6
- MTP2603Q6
- MTP27N10E
- MTP2955D
- MTP2955V
- MTP29N15E
- MTP2H-E10-C39
- MTP2N20
- MTP2N40
- MTP2N45
- MTP2N50E
- MTP2N60E
- MTP2P50E
- MTP2P50EG
- MTP2S-E10-C39
- MTP3
- MTP3001N3
- MTP3055
- MTP3055E
- MTP3055V
- MTP3055VL
- MTP30N06VL
- MTP30P06
- MTP30X
- MTP337K010P1C
- MTP33N10E
- MTP3403AN3
- MTP35A1
- MTP36N06
- MTP3H-E10
- MTP3H-E10-C
- MTP3H-E6-C
- MTP3N12
- MTP3N25E
- MTP3N40
- MTP3N55
- MTP3N60E
- MTP3NA60
相关库存
更多- MTP226M060P1B
- MTP2301N3
- MTP2303N3
- MTP2311M3
- MTP23P06V
- MTP24K11
- MTP24K7
- MTP2603N6
- MTP27N06L
- MTP2955
- MTP2955E
- MTP2955V_L86Z
- MTP2H-E10-C
- MTP2H-E6-C
- MTP2N35
- MTP2N40E
- MTP2N50
- MTP2N60
- MTP2P50
- MTP2P50E_10
- MTP2S-E10-C
- MTP2S-E6-C
- MTP30
- MTP3016
- MTP3055A
- MTP3055EL
- MTP3055V_L86Z
- MTP3055VL_Q
- MTP30N08M
- MTP30P06V
- MTP336M060P1C
- MTP33N10
- MTP3401N3
- MTP3403N3
- MTP35W
- MTP36N06V
- MTP3H-E10C
- MTP3H-E10-C39
- MTP3N100E
- MTP3N120E
- MTP3N35
- MTP3N50E
- MTP3N60
- MTP3N60FI
- MTP3-PHASE
