MTP3055V

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP3055V

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MTP3055V

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

MTP3055V

Power MOSFET

MTP3055VL

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MTP3055VL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. ThisMOSFETfeaturesfasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifi

MTP3055VL

N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

MTP3055VL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP3055VL

Power MOSFET

3055

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as

3055

CustomerSpecification

3055

WASHERSANDNUTS

[KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS

3055

N-Channel30-V(D-S)MOSFET

3055

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor18(16/30)AWGTinnedCopper0.047 b)Insulation0.016Wall,Nom.PVC0.079+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLES1569105C OR100780C300VVW-1IEC60332-118AWG ORCRUTR-6490CFT1CEROHS {0}*=FactoryCode

3055L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

AC3055

10TO3000MHzTO-8CASCADABLEAMPLIFIER

AC3055

10TO3000MHzTO-8CASCADABLEAMPLIFIER

ADM3055E

5kVrms/3kVrms,SignalandPowerIsolated,CANTransceiversforCANFD

GENERALDESCRIPTION TheADM3055E/ADM3057Eare5kVrmsand3kVrmsisolatedcontrollerareanetwork(CAN)physicallayertransceiverswithintegratedisolateddc-to-dcconverters.TheADM3055E/ADM3057Emeetflexibledatarate(CANFD)requirementsforoperationto5Mbpsandhigherandcomplyw

ADM3055E

SignalandPowerIsolated,CANTransceiversforCANFD