isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.33 Kbytes 页数：2 Pages

ISC

无锡固电

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件：791.66 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件：791.66 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 2.25A, 350-400V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件：147.35 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-Channel Power MOSFETs

文件：360.17 Kbytes 页数：5 Pages

ARTSCHIP

N-Channel 650 V (D-S) MOSFET

文件：1.08666 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N?묬hannel Enhancement?묺ode Silicon Gate

文件：213.84 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

文件：217.16 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N−Channel Enhancement−Mode Silicon Gate

ONSEMI

安森美半导体