TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

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TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

恩XP

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -2.0A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · Bridge circuits · Power Stitching

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ISC

无锡固电

Power MOSFET 2 Amps, 500 Volts

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TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

文件：230.99 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Power MOSFET 2 Amps, 500 Volts

文件：193.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 2 Amps, 500 Volts

文件：193.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a • Robust High Voltage Termination\n• Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Pb-Free Package is Available;

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Power MOSFET 2 Amps, 500 Volts

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安森美半导体