MTP2P50

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

MTP2P50

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

恩XP

MTP2P50E

Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a ; • Robust High Voltage Termination\n• Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Pb-Free Package is Available;

MTP2P50E

P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=-500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=-10V ·Fast-recoverybodydiode APPLICATIONS ·Bridgecircuits ·PowerStitching

MTP2P50E

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

MTP2P50E

Power MOSFET 2 Amps, 500 Volts

MTP2P50E_10

Power MOSFET 2 Amps, 500 Volts

MTP2P50EG

Power MOSFET 2 Amps, 500 Volts

MTP2P50EG

Power MOSFET 2 Amps, 500 Volts