MTP2955

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MTP2955D

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MTP2955E

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MTP2955E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP2955V

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOSV™PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MTP2955V

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

MTP2955V

P-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

MTP2955V

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP2955V

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThis P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.\nThese MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.; • -12 A, -60 V. RDS(ON) = 0.230 Ω @ VGS = -10 V\n• Critical DC electrical parameters specified at elevated temperature.\n• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.\n• 175°C maximum junction temperature rating. ;

MTP2955L3

P-Channel Enhancement Mode Power MOSFET