TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.12 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Av

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摩托罗拉

Power MOSFET

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TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHM New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS

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MOTOROLA

摩托罗拉

Power MOSFET

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TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.12 OHMNew Features of TMOS V\n• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology\n• Faster Switching than E–FET PredecessorsFeatures Common to TMOS V and TMOS E–FETS\n• Avalanche Energy Speci

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Power MOSFET

ONSEMI

安森美半导体

TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on)= 0.085 OHMNew Features of TMOS V\n• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology\n• Faster Switching than E–FET Predecessors\nFeatures Common to TMOS V and TMOS E–FETS\n• Avalanche Energy Spe

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