RF Power LDMOS Transistors

文件：570.83 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistors

文件：570.83 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistors

文件：570.83 Kbytes 页数：15 Pages

恩XP

1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utiliz • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

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恩智浦

Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utiliz • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

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恩智浦