Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utiliz • Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Device can be used Single-Ended or in a Push-Pull Configuration\n• Qualified Up to a Maximum of 50 VDD Operation\n• Characterized from 30 V to 50 V for Extended Power Range\n• Suitable for Linear Application with Appropriate B;

恩XP

RF Power LDMOS Transistors

文件：570.83 Kbytes 页数：15 Pages

恩XP

N?묬hannel Power MOSFET

文件：247.66 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

PCB Terminal Block

3.81 mm Pin Spacing • Board Mount PCB • 12A Current Rating • Height 12.6mm • Modular / stackable, no dovetail version

文件：312.2 Kbytes 页数：1 Pages

ALTECH

Polarization Insensitive Fiber Isolator

文件：237.06 Kbytes 页数：2 Pages

OPLINK