RF Power Field Effect Transistors

文件：1.19691 Mbytes 页数：19 Pages

恩XP

RF Power Field Effect Transistors

文件：1.19691 Mbytes 页数：19 Pages

恩XP

960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%Power Gain: 20.3 dBDrain Efficiency: 65.5%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power\n• Typical Broadband Performan;

恩XP

恩智浦

Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V

RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%Power Gain: 20.3 dBDrain Efficiency: 65.5%\n• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power\n• Typical Broadband Performan;

恩XP

恩智浦