RF Power LDMOS Transistors

文件：505.59 Kbytes 页数：20 Pages

恩XP

RF Power LDMOS Transistors

文件：505.59 Kbytes 页数：20 Pages

恩XP

720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors

The MMRF1020-04NR3 and MMRF1020-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistors are also suitable for wideband power amplifier applications from 600 to 1000 MHz and saturat • Production Tested in a Symmetrical Doherty Configuration\n• Designed for Digital Predistortion Error Correction Systems\n• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.;

恩XP

恩智浦

FREESCALE

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市达恩科技有限公司

英飞凌/实单必成
SOD123

英飞凌/实单必成

上传：深圳市拓芯泰电子科技有限公司