RF Power Field Effect Transistors

文件：829.61 Kbytes 页数：15 Pages

恩XP

RF Power Field Effect Transistors

文件：829.61 Kbytes 页数：15 Pages

恩XP

RF Power Field Effect Transistors

文件：829.61 Kbytes 页数：15 Pages

恩XP

960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz.These devices are suitable for use in pulse applications. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• In Tape and R;

恩XP

恩智浦

Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz.These devices are suitable for use in pulse applications. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• In Tape and R;

恩XP

恩智浦