Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V

RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz.These devices are suitable for use in pulse applications. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 50 VDD Operation\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• RoHS Compliant\n• In Tape and R;

恩XP

恩智浦

RF Power Field Effect Transistors

文件：829.61 Kbytes 页数：15 Pages

恩XP

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

文件：120.53 Kbytes 页数：2 Pages

Microsemi

美高森美

Schottky Barrier Rectifier

FEATURES ·Guardring for overvoltage protection ·Low power loss, high efficiency ·Low forward voltage drop ·High forward surge capability APPLICATIONS ·Freewheeling diodes ·DC/DCconverters ·Polarity protection application

文件：339.32 Kbytes 页数：2 Pages

ISC

无锡固电

2.5 Volt Reference

文件：53.76 Kbytes 页数：6 Pages

ONSEMI

安森美半导体