RF Power LDMOS Transistor

文件：758.84 Kbytes 页数：15 Pages

恩XP

RF Power LDMOS Transistor

文件：758.84 Kbytes 页数：15 Pages

恩XP

1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET

The MMRF1014NT1 is designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEPPower Gain: 18 dBDrain Efficiency: 33%IMD: –34 dBc\n• Typical Two-Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEPPower Gain: 19 dBDrain Efficiency: 33%IMD: –39 dBc\n• Capable of Handling 5:1 VSWR @ ;

恩XP

Digital Hall-effect position sensor in low-profile flange-mount housing

文件：272.33 Kbytes 页数：2 Pages

ZFSWITCHES

采埃孚

2W, Wide Input Range SMD, Single & Dual Output DC/DC Converters

文件：223.74 Kbytes 页数：8 Pages

MINMAX

捷拓科技

Qualified for lead-free reflow solder process according IPC/JEDEC J-STD-020D

文件：422.05 Kbytes 页数：4 Pages

TOTAL-POWER

Total Power International