RF Power LDMOS Transistors

文件：645.82 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors

文件：645.82 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors

文件：645.82 Kbytes 页数：13 Pages

恩XP

1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs

The MMRF1011HR5 and MMRF1011HSR5 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulse applications, such as L-Band radar. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%Power Gain: 18 dBDrain Efficiency: 60.5%\n• Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 300 W Peak Power\n• Characterized with Series Equivalen;

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恩智浦

Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V

The MMRF1011HR5 and MMRF1011HSR5 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulse applications, such as L-Band radar. • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%Power Gain: 18 dBDrain Efficiency: 60.5%\n• Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 300 W Peak Power\n• Characterized with Series Equivalen;

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恩智浦