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MMD60R580QRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD60R580QRH

600V 0.58(ohm) N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580PB

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580PBRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD60R580PBRH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD60R580PRH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580Q

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMD60R580Q

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMF60R580PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMF60R580PTH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580Q

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580QTH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580QTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MMIS60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R580PTH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

供应商型号品牌批号封装库存备注价格
23+
N/A
90550
正品授权货源可靠
询价
MAGNACHIP/美格纳
23+
TO-252
90000
只做原厂渠道价格优势可提供技术支持
询价
MAGNACHIP/美格纳
23+
TO-252
50000
全新原装正品现货,支持订货
询价
MAGNACHIP
22+
TO-252
3255
强势库存!原装现货!
询价
MAGNACHIP/美格纳
22+
TO-252
3000
原装现货假一赔十
询价
MAGNACHIP/美格纳
22+
TO-252
50000
只做原装正品,假一罚十,欢迎咨询
询价
MAGNACHIP/美格纳
22+21+
TO-252
60906
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
MAGNACHIP/美格纳
2023+
TO-252
6055
一级代理优势现货,全新正品直营店
询价
isc
2024
DPAK/TO-252
5750
国产品牌isc,可替代原装
询价
MAGNACHIP/美格纳
TO-252
502094
16余年资质 绝对原盒原盘 更多数量
询价
更多MMD60R580QRH供应商 更新时间2024-5-21 11:36:00