MMD60R580PBRH规格书库存现货无锡固电ISC-114ic电子网

零件型号	下载订购	功能描述	制造商上传企业	LOGO
MMD60R580PBRH	文件：353.2 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MMD60R580PBRH	文件：300 bytes Page：1 Pages	600V N-Ch MOSFET	MagnaChipMagnaChip Semiconductor. 美格纳	MagnaChip
MMD60R580PBRH	文件：1.07496 Mbytes Page：10 Pages	600V 0.58(ohm) N-channel MOSFET	MGCHIP MagnaChip Semiconductor.	MGCHIP
MMD60R580PRH	文件：1.07452 Mbytes Page：10 Pages	600V0.58(ohm)N-channelMOSFET	MGCHIP MagnaChip Semiconductor.	MGCHIP
MMD60R580PRH	文件：353.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MMD60R580Q	文件：1.37094 Mbytes Page：10 Pages	600V0.58(ohm)N-channelMOSFET	MGCHIP MagnaChip Semiconductor.	MGCHIP

更多MMD60R580PBRH供应商更新时间2025-8-3 16:36:00