isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：353.36 Kbytes 页数：2 Pages

ISC

无锡固电

600V 0.9(ohm) N-channel MOSFET

文件：1.14025 Mbytes 页数：10 Pages

MGCHIP

600V N-Ch MOSFET

MagnaChip

美格纳

Low power loss by high speed switching and low on-resistance

文件：1.27895 Mbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

文件：331 Kbytes 页数：2 Pages

ISC

无锡固电

600V 0.9(ohm) N-channel MOSFET

文件：1.21191 Mbytes 页数：11 Pages

MGCHIP