Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

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DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of w

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Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

文件：76.17 Kbytes 页数：5 Pages

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Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

文件：211.3 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

文件：211.3 Kbytes 页数：7 Pages

ONSEMI

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Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

文件：76.17 Kbytes 页数：5 Pages

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08928 Mbytes 页数：9 Pages

VBSEMI

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Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

文件：76.17 Kbytes 页数：5 Pages

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功率 MOSFET，50V，2A，300mΩ，双 N 沟道，SO-8

这些微型表面贴装 MOSFET 具有超低 RDS(on) 和真正逻辑电平性能。它们能够承受雪崩和换相模式下的高能量，漏极-源极二极管具有短逆向恢复时间。这些器件设计用于高能效至关重要的低电压、高速开关应用。典型应用为 DC-DC 转换器以及便携式和电池供电产品中的功率管理，如计算机、打印机、手机和无绳电话。它们还可用于大容量存储产品（例如磁盘驱动器和磁带驱动器）中的低压电机控制。雪崩能量专用于消除设计中的猜测，其中感应负载可进行切换，并提供额外的安全裕度，以抵御意外的电压瞬变。 • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life\n• Logic Level Gate Drive - Can Be Driven by Logic ICs\n• Miniature SO-8 Surface Mount Package - Saves Board Space\n• Diode Is Characterized for Use In Bridge Circuits\n• Diode Exhibits High Speed\n• Avalanche Energy Specified\n;

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