MMD70R600PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.3A@TC=25℃ ·DrainSourceVoltage :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMD70R600PRH

700V 0.6(ohm) N-channel MOSFET

70R600P

700V0.6(ohm)N-channelMOSFET

HCD70R600S

SuperiorAvalancheRuggedTechnology

HCD70R600S

700VN-ChannelSuperJunctionMOSFET

HCP70R600S

SuperiorAvalancheRuggedTechnology

HCS70R600S

RobustGateOxideTechnology

HCS70R600S

N-ChannelSuperJunctionMOSFET

FEATURES ·DrainCurrent-ID=7.3A@TC=25℃ ·DrainSourceVoltage-VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·PowerFactorCorrection(PFC) ·TVPower&LEDlightingPower ·ACtoDCConverters

HCU70R600S

700VN-ChannelSuperJunctionMOSFET

IIPD70R600CE

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation