Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

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ONSEMI

安森美半导体

SOT-363

DIODE

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SOT-363

Slkor(萨科微

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SOT-363

CJ

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TO-263

MAGNACHIP

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