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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFQ26N60P	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi	IXYS IXYS Integrated Circuits Division	IXYS
IXFR26N60	文件：330.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR26N60Q	文件：37.76 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247Q-CLASS HiPerFET™PowerMOSFETsISOPLUS247™Q-CLASS (ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalanceRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2	IXYS IXYS Integrated Circuits Division	IXYS
IXFT26N60	文件：70.95 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •	IXYS IXYS Integrated Circuits Division	IXYS
IXFT26N60P	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi	IXYS IXYS Integrated Circuits Division	IXYS
IXFT26N60Q	文件：107.91 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa	IXYS IXYS Integrated Circuits Division	IXYS
IXFV26N60P	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi	IXYS IXYS Integrated Circuits Division	IXYS
IXFV26N60PS	文件：248.46 Kbytes Page：5 Pages	N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi	IXYS IXYS Integrated Circuits Division	IXYS
IXFX26N60	文件：367.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX26N60Q	文件：103.5 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi	IXYS IXYS Integrated Circuits Division	IXYS
IXTH26N60P	文件：380.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTQ26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXTQ26N60P	文件：300.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTT26N60P	文件：236.59 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
SIHFP26N60L	文件：444.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SIHFP26N60L	文件：226.66 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHFP26N60L	文件：159.36 Kbytes Page：8 Pages	PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHH26N60E	文件：195.34 Kbytes Page：9 Pages	Kelvinconnectionforreducedgatenoise	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHH26N60EF	文件：201.1 Kbytes Page：9 Pages	Reducedswitchingandconductionlosses	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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详细参数

型号：
IXTV26N60P
功能描述：
MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IXTV26N60P	IXYS	07+/08+	PLUS-220	300		询价
深圳市华来深电子有限公司	IXTV26N60P	IXYS	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
中科航电(深圳)半导体技术有限公司	IXTV26N60P	IXYS	2019+	TO-220-3	65500	ShortTab	询价
深圳市宏捷佳电子科技有限公司	IXTV26N60P	IXYS	23+	PLUSTO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳兆威电子有限公司	IXTV26N60P	IXYS	20+	TO-220-3	90000	全新原装正品/库存充足	询价
深圳市国宇半导体科技有限公司	IXTV26N60P	IXYS/艾赛斯	23+	PLUS220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IXTV26N60P	IXYS	22+	TO2203 Short Tab	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IXTV26N60P	IXYS	21+	TO2203 Short Tab	13880	公司只售原装,支持实单	询价
易创佳业科技（深圳）有限公司	IXTV26N60P	IXYS/艾赛斯	23+	PLUS220	6000	原装正品，支持实单	询价
深圳市鹏顺微电子科技有限公司	IXTV26N60P	IXYS	2022+	TO-220-3(SMT)标片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价

更多IXTV26N60P供应商更新时间2024-6-18 15:30:00

详细参数

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