首页 >IXTQ26N60P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXTQ26N60P | PolarHV Power MOSFET | IXYS IXYS Integrated Circuits Division |  | |
IXTQ26N60P | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SMPSMOSFET FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技 |  | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.25Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity | VishayVishay Siliconix 威世科技 | | ||
HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A) FeaturesandBenefits •Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated • | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi | IXYS IXYS Integrated Circuits Division | | ||
HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●Fa | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
HiPerFETPowerMOSFETsQ-Class Features ●Lowgatecharge ●Internationalstandardpackages ●EpoxymeetUL94V-0,flammabilityclassification ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Avalancheenergyandcurrentrated ●FastintrinsicRectifier Advantages ●Easytomount ●Spacesavi | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=270mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated PolarHV™PowerMOSFET N-ChannelEnhancementModeFastRecoveryDiodeAvalancheRated Features •FastRecoverydiode •UnclampedInductiveSwitching(UIS)rated •Internationalstandardpackages •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavi | IXYS IXYS Integrated Circuits Division | |
详细参数
- 型号：
IXTQ26N60P
- 功能描述：
MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-3P |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS |
08+(pbfree) |
TO-3P |
8866 |
询价 | |||
IXYS |
2019+ |
TO-3P-3 |
65500 |
SC-65-3 |
询价 | ||
23+ |
N/A |
85600 |
正品授权货源可靠 |
询价 | |||
IXYS |
2020+ |
TO-3P |
37910 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
IXYS |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-3P |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IXYS |
1809+ |
TO-3P |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-3P |
5430 |
公司只做原装正品 |
询价 |
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