N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

PolarHV™ Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features • Fast Recovery diode • Unclamped Inductive Switching (UIS) rated • International standard packages • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savi

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IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

Features ● Low gate charge ● International standard packages ● Epoxy meet UL 94 V-0, flammability classification ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Avalanche energy and current rated ● Fast intrinsic Rectifier Advantages ● Easy to mount ● Space savi

文件：103.5 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：380.88 Kbytes 页数：2 Pages

ISC

无锡固电