HiPerFET Power MOSFETs Q-Class

Features ● Low gate charge ● International standard packages ● Epoxy meet UL 94 V-0, flammability classification ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Avalanche energy and current rated ● Fast intrinsic Rectifier Advantages ● Easy to mount ● Space savi

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IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

isc N-Channel MOSFET Transistor

文件：380.88 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV Power MOSFET

文件：236.59 Kbytes 页数：5 Pages

IXYS

艾赛斯

PolarHV Power MOSFET

文件：236.59 Kbytes 页数：5 Pages

IXYS

艾赛斯