High Voltage MOSFET N-Channel, Enhancement Mode

High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re

文件：65.48 Kbytes 页数：2 Pages

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) =80Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.7 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) =110Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：297.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel, Depletion Mode High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

文件：93.01 Kbytes 页数：2 Pages

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艾赛斯

Power MOSFET

文件：164.45 Kbytes 页数：6 Pages

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艾赛斯

Power MOSFET

文件：164.45 Kbytes 页数：6 Pages

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艾赛斯

N沟道耗尽型MOSFET

• “常开”运行状态\n• 线性模式容限\n• 内部标准封装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

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