IXTY1N100P资料datasheet下载贸易商IXYS-114ic电子网

首页 >IXTY1N100P>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXTY1N100P	文件：153.86 Kbytes Page：4 Pages	Polar Power MOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications	IXYS IXYS Integrated Circuits Division	IXYS
1N100	文件：62.05 Kbytes Page：1 Pages	OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N100	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N100	文件：70.81 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE [BKCInternationalElectronicsInc.] GOLDBONDEDDIODES	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N100	文件：442.88 Kbytes Page：1 Pages	MEDIUMANDLOWVOLTAGEGERMANIUMDIODES MEDIUMANDLOWVOLTAGEGERMANIUMDIODES	AMMSEMI American Microsemiconductor	AMMSEMI
1N100A	文件：2.79285 Mbytes Page：78 Pages	GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N100A	文件：62.05 Kbytes Page：1 Pages	OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N100A	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
1N100A	文件：136.03 Kbytes Page：1 Pages	GERMANIUMDIODES GoldBondedGermaniumDiodesinDO-7Package	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N100A	文件：71.49 Kbytes Page：1 Pages	germaniumsignaldiode germaniumsignaldiode	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
A1N100TW	文件：675.5 Kbytes Page：2 Pages	FORMULAULMoldedCaseCircuitBreakers	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
IXTA1N100	文件：299.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTA1N100	文件：46.64 Kbytes Page：2 Pages	HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb	IXYS IXYS Integrated Circuits Division	IXYS
IXTA1N100P	文件：315.15 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTA1N100P	文件：153.86 Kbytes Page：4 Pages	PolarPowerMOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications	IXYS IXYS Integrated Circuits Division	IXYS
IXTH1N100	文件：381.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH1N100	文件：87.69 Kbytes Page：2 Pages	HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho	IXYS IXYS Integrated Circuits Division	IXYS
IXTP1N100	文件：46.64 Kbytes Page：2 Pages	HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb	IXYS IXYS Integrated Circuits Division	IXYS
IXTP1N100P	文件：294.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤15Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mo	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTP1N100P	文件：153.86 Kbytes Page：4 Pages	PolarPowerMOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications	IXYS IXYS Integrated Circuits Division	IXYS

12 >>>

详细参数

型号：
IXTY1N100P
功能描述：
MOSFET 1 Amps 1000V 14 Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXTY1N100P	IXYS	24+	TO-252AA	30000	晶体管-分立半导体产品-原装正品	询价
深圳市宏捷佳电子科技有限公司	IXTY1N100P	IXYS	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市华来深电子有限公司	IXTY1N100P	IXYS	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳兆威电子有限公司	IXTY1N100P	IXYS	20+	TO-252	90000	全新原装正品/库存充足	询价
深圳市鼎欣微电子有限公司	IXTY1N100P	IXYS/艾赛斯	21+	TO-252(DPAK)	30000	只做正品原装现货	询价
深圳市艾宇欣科技有限公司	IXTY1N100P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXTY1N100P	IXYS	1809+	TO-252	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXTY1N100P	IXYS/艾赛斯	23+	TO-252	10000	公司只做原装正品	询价
深圳市易讯博科技有限公司	IXTY1N100P	IXYS	22+	NA	18	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IXTY1N100P	IXYS	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原厂渠道,现货配单	询价

更多IXTY1N100P供应商更新时间2024-6-2 10:12:00

详细参数

相关规格书

相关库存