Trench Power MOSFET Very low RDS(on)

文件：117.65 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V 278A, RDS(ON) typ = 1.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant.

文件：455.88 Kbytes 页数：5 Pages

CET-MOS

华瑞

100V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：888.8 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

100V SGT N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Managment • Load Switch

文件：884.31 Kbytes 页数：6 Pages

HUIXIN

慧芯电子