HiPerFET™ Power MOSFETs ISOPLUS247™ Q-CLASS

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalance Rated, High dV/dt

Low Gate Charge and Capacitances

Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• IXYS advanced low Qg process

• Low gate charge and capacitances

- easier to drive

- faster switching

• Low drain to tab capacitance(<30pF)

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Rated for Unclamped Inductive Load

Switching (UIS)

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC & DC motor control

Advantages

• Easy assembly

• Space savings

• High power density