| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFQ28N60 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=260mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
Polar3 HiperFET Power MOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
Power MOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
Power MOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelPowerMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated • | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=28A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LowVIGBT Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup | IXYS IXYS Integrated Circuits Division | IXYS | ||
LowVIGBT Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup | IXYS IXYS Integrated Circuits Division | IXYS | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Completelylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:forde | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM):RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
IXFQ28N60
- 功能描述：
MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
华奥DHA |
21+ROHS |
TO3P |
400000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IXYS |
2019+ |
TO-3P-3 |
65500 |
SC-65-3 |
询价 | ||
IXYS |
23+ |
TO3P |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IXYS |
1931+ |
N/A |
60 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-3P |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO3P |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
NA |
60 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO3P3 SC653 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO3P3 SC653 |
13880 |
公司只售原装,支持实单 |
询价 |
相关规格书
更多- IXFQ28N60P3
- IXFQ60N50P3
- IXFR140N30P
- IXFR180N085
- IXFR180N15P
- IXFR200N10P
- IXFR20N120P
- IXFR24N50Q
- IXFR26N100P
- IXFR30N60P
- IXFR32N50Q
- IXFR32N80Q3
- IXFR36N60P
- IXFR44N50P
- IXFR44N60
- IXFR48N50Q
- IXFR64N60P
- IXFR80N50P
- IXFR80N60P3
- IXFT140N10P
- IXFT15N100Q3
- IXFT18N90P
- IXFT20N80Q
- IXFT26N50Q
- IXFT320N10T2
- IXFT36N50P
- IXFT400N075T2
- IXFT44N50P
- IXFT50N20
- IXFT50N60P3
- IXFT58N20Q
- IXFT86N30T
- IXFV15N100P
- IXFV22N60P
- IXFV26N50PS
- IXFX120N25P
- IXFX140N25T
- IXFX160N30T
- IXFX170N20T
- IXFX180N25T
- IXFX230N20T
- IXFX24N100Q3
- IXFX27N80Q
- IXFX32N100P
- IXFX32N90P
相关库存
更多- IXFQ50N60P3
- IXFR120N20
- IXFR15N100Q3
- IXFR180N10
- IXFR18N90P
- IXFR20N100P
- IXFR230N20T
- IXFR24N80P
- IXFR26N120P
- IXFR32N100Q3
- IXFR32N80P
- IXFR36N50P
- IXFR40N90P
- IXFR44N50Q3
- IXFR44N80P
- IXFR64N50Q3
- IXFR64N60Q3
- IXFR80N50Q3
- IXFR90N30
- IXFT140N10PTRL
- IXFT18N100Q3
- IXFT20N80P
- IXFT24N90P
- IXFT26N60Q
- IXFT32N50Q
- IXFT36N60P
- IXFT42N50P2
- IXFT44N50Q3
- IXFT50N30Q3
- IXFT52N50P2
- IXFT60N50P3
- IXFT94N30P3
- IXFV22N50P
- IXFV22N60PS
- IXFX120N20
- IXFX120N30T
- IXFX140N30P
- IXFX170N20P
- IXFX180N10
- IXFX20N120P
- IXFX24N100
- IXFX26N120P
- IXFX320N17T2
- IXFX32N100Q3
- IXFX34N80
