Low V IGBT

Features ● International standard packages ● Low VCE(sat) - for minimum on-state conduction losses ● High current handling capability ● MOS Gate turn-on - drive simplicity Applications ● AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power sup

文件：596.36 Kbytes 页数：5 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT with Diode

Features • International standard packages • IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible p

文件：57.31 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 150W TO268

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 150W TO268

IXYS

艾赛斯