PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

HiPerFAST IGBT with Diode

Optimized for 10-25 kHz hard switching and up to Features • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterrup

文件：622.97 Kbytes 页数：6 Pages

IXYS

艾赛斯

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 500W PLUS247

IXYS

艾赛斯

B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

文件：514.169 Kbytes 页数：6 Pages

IXYS

艾赛斯

HiPerFAST IGBT with Diode

Optimized for 10-25 kHz hard switching and up to Features • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterrup

文件：622.97 Kbytes 页数：6 Pages

IXYS

艾赛斯

B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

文件：514.169 Kbytes 页数：6 Pages

IXYS

艾赛斯