IXGX60N60B2D1分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

IXGX60N60B2D1属于分立半导体产品的晶体管-UGBT、MOSFET-单。由IXYS Corporation制造生产的IXGX60N60B2D1晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

Optimized for 10-25 kHz hard switching and up to

特性 Features

• Square RBSOA

• High current handling capability

• MOS Gate turn-on for drive simplicity

• Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM

Applications

• Switch-mode and resonant-mode power supplies

• Uninterruptible power supplies (UPS)

• DC choppers

• AC motor speed control

• DC servo and robot drives

Advantages

• Space savings (two devices in one package)

• Easy to mount with 1 screw

100 kHz resonant switching