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PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits •Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160QA-Q

60V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducesprint

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160T

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

PBSS4160T

LowVCEsat(BISS)transistors

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5160T. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducesprinted-circuitboardarearequired •

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS4160T-Q

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T-Q. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiency,reducesheatgeneration •Reducespri

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160U

60V,1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160U

60V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT323(SC-70)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160U. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Highcol

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS4160V

60V,1ANPNlowVCEsat(BISS)transistor

Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666plasticpackage. PNPcomplement:PBSS5160V. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboarda

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS4160V

60V,1ANPNlowVCEsat(BISS)transistor

Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666plasticpackage. PNPcomplement:PBSS5160V. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboarda

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS4160V

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS5160V 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160X

60V,1ANPNlowVCEsatBISStransistor

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PE4160

SMCPlugRightAngleConnectorCrimp/SolderAttachment

PASTERNACKPasternack Enterprises, Inc.

帕斯特纳克

PE4160

SMCPlugRightAngleConnectorCrimp/SolderAttachmentForRG178,RG196

Description Pasternack’sPE4160SMCplugrightangleconnectorwithcrimp/solderattachmentforRG178andRG196ispartofourfulllineofRFcomponentsavailableforsame-dayshipping.OurSMCplugconnectoroperatesuptoamaximumfrequencyof10GHz.Itsrightanglebodygeometryallowsfor

PASTERNACKPasternack Enterprises, Inc.

帕斯特纳克

PS4160

PS401BatteryManagerModulewithLEDSOCDisplay

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

详细参数

  • 型号:

    IRHM4160

  • 制造商:

    International Rectifier

  • 功能描述:

    HEXFET, HIREL, RAD HARD,G4 - Bulk

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
isc
2024
TO-220
10000
国产品牌isc,可替代原装
询价
IR
21+
SOP
6688
十年老店,原装正品
询价
CHINA
22+
TO-254AA
640
航宇科工半导体-央企合格优秀供方!
询价
IR
22+
TO-254AA
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-254AA
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-254AA
8000
只做原装现货
询价
CHINA
21+ROHS
TO-254AA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多IRHM4160供应商 更新时间2024-6-2 9:00:00