丝印：U5；Package：SOT23；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces pri

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60 V, 1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency, reduces heat generation\n• Reduces printed-circuit board area required\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

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60 V, 1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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