PBSS4160T-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS4160T-Q
功能描述	60 V, 1 A NPN low VCEsat (BISS) transistor
丝印标识	U5
封装外壳	SOT23
文件大小	257.81 Kbytes
页面数量	12 页
生产厂商	NEXPERIA
中文名称	安世
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-14 16:40:00
人工找货	PBSS4160T-Q价格和库存，欢迎联系客服免费人工找货

1. General description

NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q.

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High efficiency, reduces heat generation

• Reduces printed-circuit board area required

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Major application segments:

• Automotive 42 V power

• Telecom infrastructure

• Industrial.

• Power management:

• DC-to-DC conversion

• Supply line switching.

• Peripheral driver

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver (e.g. relays, buzzers and motors).