PBSS4160PANPS中文资料恩XP数据手册PDF规格书

1. General description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic

package with visible and solderable side pads.

NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• Exposed heat sink for excellent thermal and electrical conductivity

• High energy efficiency due to less heat generation

• Suitable for Automatic Optical Inspection (AOI) of solder joints

• AEC-Q101 qualified

3. Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• LED lighting

• Power switches (e.g. motors, fans)