PBSS4160PANP中文资料安世数据手册PDF规格书

厂商型号	PBSS4160PANP
功能描述	60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
丝印标识	2M
封装外壳	DFN2020-6
文件大小	337.41 Kbytes
页面数量	21 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 18:15:00
人工找货	PBSS4160PANP价格和库存，欢迎联系客服免费人工找货

1. General description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power

DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High efficiency due to less heat generation

• AEC-Q101 qualified

3. Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)